A silicon nitride ion sensitive field effect transistor?based immunosensor for determination of urinary albumin

The development of an immunosensor-based biosensor to detect the human serum albumin (HSA) was developed as a low-cost and label-free electrical detection through silicon nitride ion-sensitive field-effect transistor (Si3N4-ISFET). This sensor functionalized using 3-Aminopropyltriethoxysilane (APTES). silanized Si3N4-ISFET surface covalently linked with antibody against HSA (Anti-HSA) via glutaraldehyde (GA) function immunosensor for HSA. interaction between Anti-HSA on this device is monitored by changing gate potential at constant drain current 50 ?A. relationship concentration change linear up 500 ?g/ml limit 5 ?g/ml. offers good precision in both intra- inter-assay relative standard deviation 6.61%, 7.48%, 10.69%, 9.67%, 13.16%, 15.52% 100, 200, 400 average percentage recovery assay 32.1, 102.1, 202.1 96.55%. also provides its satisfactory selectivity when testing Bence Jones protein solution. In addition, results that done similar conventional method immunoturbidimetric regression 0.99; n = 40 paired sample t-test <0.01. Thus, could be applied urinary microalbumin because simplicity correlation value.